Depth profiling of trace constituents using secondary ion mass-spectrometry
نویسندگان
چکیده
منابع مشابه
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques
Ultra shallow dopant profiles are one of the major challenges for ULSI silicon metrology. Following the ITRS 2002, the 90nm technology node will appear in 2004 along with the maximum drain extension in the range of 15-25 nm for both P-MOS and N-MOS devices. In this frame, a very abrupt junction with a decay length of 4 nm/decade is mandatory. A depth resolution better than 0.7 nm in profiling s...
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ژورنال
عنوان ژورنال: Journal of Research of the National Bureau of Standards
سال: 1988
ISSN: 0160-1741
DOI: 10.6028/jres.093.088